SiO<sub>2</sub> Etching Rate Control of TMAH
نویسندگان
چکیده
منابع مشابه
TMAH/IPA anisotropic etching characteristics
The main advantage of tetramethyl ammnium hydroxide (TMAH)-based solutions is their full compatibility with IC technologies. In this work a new etching system of TMAH/IPA (isopropyl alcohol) is suggested. The influence of the addition of IPA to TMAH solutions on their etching characteristics is presented. The etch rates of (100) oriented silicon crystal planes decreases linearly with decreasing...
متن کاملThe fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching.
Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10(13) ions cm(- 2) has been determined to be the threshold value for achieving observable etching resis...
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The development of nanoscale devices requires rapid prototyping methods that can be applied in combination with well-known clean room processing techniques. We show that focused ion beam (FIB) Ga-ion implantation can be used for creating masks for the fabrication of silicon nanostructures by IC-compatible, anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The FIB writing modifies on...
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15 صفحه اولEffect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography
The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were in...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Sensors and Micromachines
سال: 1998
ISSN: 1341-8939,1347-5525
DOI: 10.1541/ieejsmas.118.278